"Atomic-Scale Engineering: Molecular and 2D Electronics for Post-Silicon Electronics"
WANG Lab pioneers the convergence of molecular electronics and two-dimensional (2D) materials to overcome the scaling limits of traditional semiconductors. By integrating Self-Assembled Monolayers (SAMs) with 2D semiconductors (e.g., Graphene, MoS₂, WSe₂), we develop advanced heterojunction devices, including molecular diodes, rectifiers, and molecular-scale memories. Our research focuses on the precise tuning of electrical properties via atomic-level engineering—controlling molecular orientation, dipoles, and interface band alignment. This approach enables the realization of ultra-low-power, high-density functional devices, paving the way for innovative applications in in-sensor computing and next-generation neuromorphic hardware.
