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마이페이지 로그아웃

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Neuromorphic Electronics
Organic Electronics / 2D Electronics
Wearable Intelligent Electronics

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- 2026-2030
- 2021-2025
- 2016-2020
- 2011-2015
- 2006-2010
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MEMBERS

Professor
Research Professor
Students
Alumni

RESEARCH

Overview
Neuromorphic Electronics
Organic Electronics / 2D Electronics
Wearable Intelligent Electronics

Publication
- Research Highlight
- All
- 2026-2030
- 2021-2025
- 2016-2020
- 2011-2015
- 2006-2010
Conference
Patents
Book

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GALLERY

RECRUITMENT

CONTACT

오토알루미늄

Wang lab at Korea University

Wang lab at Korea University

Wang lab at Korea University

Wang lab at Korea University

Wang lab at Korea University

Wang lab at Korea University

Publications

Neuromorphic Electronic device and eXtended computing Technology Group

MEMBERS
RESEARCH
PUBLICATION
- Publication
  - Research Highlight
  - All
  - 2026-2030
  - 2021-2025
  - 2016-2020
  - 2011-2015
  - 2006-2010
- Conference
- Patents
- Book
NEWS
GALLERY
RECRUITMENT
CONTACT

Publication
- Research Highlight
- All
- 2026-2030
- 2021-2025
- 2016-2020
- 2011-2015
- 2006-2010
Conference
Patents
Book

Research Highlight
All
2026-2030
2021-2025
2016-2020
2011-2015
2006-2010

Research Highlight
All
2026-2030
2021-2025
2016-2020
2011-2015
2006-2010

2026

[116]. H. Kim et al., submitted (2025)

[115]. G. Park et al., submitted (2025)

[114]. The Rise of Organic Electrochemical Transistors for Brain-Inspired Neuromorphic Computing

H. Kim, H. Jeong*, and G. Wang*, Adv. Elec. Mater. accepted (2026) (*Invited Review)

[113]. Electroluminescent Perovskite QD-based Neural Networks for Energy-efficient and Accelerate Multitasking Learning

Y. R. Park and G. Wang*, Sci. Adv, 12, eady8518 (2026)

[112]. A Vertical Molecular Synaptic Transistor with Redox-Induced Analog States

J. Nam, M. Song, H. Lee, C. Lee, D. Kim, G. Wang, K. Kang, and T. Lee, ACS Nano, 20, 1170−1180 (2026)

2025

[111]. Nonvolatile transition of molecular orbital gating for reconfigurable molecular ambipolar transistor switch

J. S. Eo†, T. Jeon†, Y. R. Park, H. B. Kim, E. Lee, S. Bae, H. Jeong, T. Lee and G. Wang*, ACS Nano 19, 41386 (2025)

[110]. Wafer-Scale Homogenous Growth of Tungsten Disulfide via Promoter-Assisted Metal–Organic Chemical Vapor Deposition

D. H. Koo, J. H. Kang, J. S. Kim, J. Chang, K. J. Jang, S. Lee, Y. Lee, K. Kim, G. Wang, Y.-S. Kim, D. Lee, C.-H. Lee* , ACS Materials Letters 7, 3573 (2025)

[109]. Real-time and rapid dynamic missile identification utilizing a TiOx memristor array

M. Kim, G. Park, G. Wang* Adv. Intel. Sys. e202500678 (2025)

[108]. Edge Intelligence through In-Sensor and Near-Sensor Computing for the Artificial Intelligence of Things

Y. Baek†, B. Bae†, H. Shin†, C. Sonnadara†, H. Cho†, C.-Y. Lin†, Y. Mu†, C. Shen*, S. Shah*, G. Wang*, and K. Lee* npj uncon. Com. 2(1), 25 (2025)

[107]. Skin-conformal electronics for intelligent gesture recognition

I. Lee†, H. Shin†, H. Cho†, J.-G. Choi, G. Wang*, and S. Park* Nature Reviews Elec. Eng. 2, 736–754 (2025)

[106]. Gate stack engineering of two-dimensional transistors

Y. H. Kim, D. Lee, W. Huh, J. Lee, D. Lee, G. Wang, J. Park, D. Ha, C.-H. Lee* Nature Elec. 8, 770–783 (2025)

[105]. Polarization-sensitive in-sensor computing in chiral organic integrated 2D p-n heterostructures for mixed-multimodal image processing

J.-J. Lee, S.-J. Han, C. Choi, C. Seo, S. Hwang, J. Kim, J. P. Hong, J. Jang, J. Kyhm, J. W. Kim, B.-S. Yu, J. A. Lim, G. Wang, J. Kang, Y. Kim, S.-k. Ahn*, J. Ahn*, D. K. Hwang* Nature Com. 16 (1), 4624 (2025)

[104]. Electrochemiluminescent tactile visual synapse enabling in situ health monitoring

W. Kim†, K. Lee†, S. Choi†, E. Park, G. Kim, J. Ha, Y. Kim, J. Jang, J. H. Oh, H.Y. Kim, W. Jiang, J. Yoo, T. Kim, Y. Kim, K.-N. Kim, J. Hong, A. Javey, D.-w. Rha, T.-W. Lee, K. Kang, G. Wang* and C. Park* Nature Mater. 24, 925–934 (2025), (*Featured in News & Views "Q. Sun et al., Synapse-powered vitality. Nat. Mater. 24, 812-813")

[103]. Conductive-bridge interlayer contacts for two-dimensional optoelectronic devices

J. Jang, J. P. Hong, S.-J. Kim, J. Ahn, B.-S. Yu, J. Han, K. Lee, A. Ha, E. Yoon, W. Kim, S. Jo, H. W. Ko, S. K. Yoon, T. Taniguchi, K. Watanabe, H. Baek, D.-Y. Kim, K. Lee, S. Mun, K. H. Lee, S. Park, K. Kim, Y. J. Song, S. A. Lee, H. J. Kim, J. W. Shim, G. Wang, J.-H. Kang, M.-C. Park* and D. K. Hwang* Nature Elec. 8 (4), 298-308 (2025)

[102]. Reconfigurable Organic Electrochemical Transistors with High Dynamic Ranges for Fully Integrated Physical Reservoir Computing

C. Han†, M. Kim†, S. J. Park†, J. S. Eo, D. Kim, Y. R. Park, S. Jung*, and G. Wang* Adv. Funct. Mater. 35 (26), 2423814 (2025)

[101]. Implementation of monolithic 3D integrated TiOx memristor-based neural network for high-performance in-memory computing

Y. S. An†, D. Kim†, Y. R. Park, J. S. Eo, M. Kim, D. Kim, H. B. Kim, B. Lee* and G. Wang* Nano Energy 139, 110999 (2025)

[100]. Analysis and Fully Memristor-based Reservoir Computing for Temporal Data Classification

A. Singh, S. Choi, G. Wang, M. Daimari, B.-G. Lee* Neural Networks, 182, 106925 (2025)

[99]. Dual-Electrolyte Neuromorphic Transistor for Risk Detection and Image Processing

S.-K. Kim, S.-W. Choi, M. Kim, K.-R. Yun, G. Wang and T.-Y Seong* Adv. Mater. Tech. 10 (7), 2401617 (2025)

2024

[98]. Learning-Effective Mixed-Dimensional Halide Perovskite QD Synaptic Array for Self-rectifying and Luminous Artificial Neural Networks

Y. R. Park and G. Wang* Adv. Funct. Mater. 34, 2307971 (2024) (*Front cover selected)

[97]. Tilt‐Engineered Molecular‐Scale Selector for Enhanced Learning in Artificial Neural Networks

J. S. Eo, J. Shin, T. Jeon, J. Jang* and G. Wang* Adv. Funct. Mater. 34 (16), 2311103 (2024)

[96]. 3D-integrated Multilayered Physical Reservoir Array for Learning and Forecasting Time-series Informtion

S. Choi, J. Shin, G. Park, J. S. Eo, J. Jang, J. J. Yang*, and G. Wang* Nature Comm. 15, 2044 (2024) (*Featured article selected in "Device")

[95]. Artificial neuromodulator-synapse mimicked by a three-terminal vertical organic ferroelectric barristor for fast and energy-efficient neuromorphic computing

S. Ham†, J. Jang†, D. Koo, S. Gi, D. Kim, S. Jang, N. D. Kim, S. Bae, B. Lee, C.-H. Lee, and G. Wang* Nano Energy, 124, 109435 (2024)

[94]. Reversible Polarity Control in 2D MoTe2 Field-Effect Transistors for Complementary Logic Gate Applications

B.S. Yu, W. Kim, J. Jang, J.‐J. Lee, J. P. Hong, N. Kwon, S. Kim, A. Ha, H.K. Kim, J.P. Ahn, K. Jeong, T. Taniguchi, K. Watanabe, G. Wang, J. Ahn, S. Park, & D. K. Hwang* Adv. Funct. Mater. 34, 2404129 (2024)

[93]. Boltzmann switching MoS2 metal-semiconductor field-effect transistors enabled by monolithic-oxide-gapped metal gates at the Schottky-Mott limit

Y. H. Kim, W. Jiang, D. Lee, D. Moon, H.‐Y. Choi, J.‐C. Shin, Y. Jeong, J. C. Kim, J. Lee, W. Huh, C. Y. Han, J.‐P. So, T. S. Kim, S. B. Kim, H. C. Koo, G. Wang, K. Kang, H.‐G. Park, H. Y. Jeong, S. Im, G.‐H. Lee, T. Low, C.‐H. Lee* Adv. Mater. 36, 2314274 (2024)

[92]. Perovskite Field-effect Transistor Memory employing a Large Grain Sized a-Phase Formamidine Lead Triiodide

D. Kim, Y. R. Park, Ch. Kim, S. Lee, H. Min* and G. Wang* ACS Appl. Elec. Mater. 6, 6651 (2024)

2023

[91]. Active traffic signal decision using vector-matrix multiplication

J. Jang, T. Jeon, and G. Wang* Adv. Intel. Sys. 220228 (2023)

[90]. Heterosynaptic MoS2 Memtransistors Emulating Biological Neuromodulation for Energy-Efficient Neuromorphic Electronics

W. Huh†, D. Lee†, S. Jang, J. H. Kang, T. H. Yoon, J.-P. So, Y. H. Kim, J. C. Kim, H.-G. Park, H. Y. Jeong, G. Wang and C.-H. Lee* Adv. Mater. 35, 2211525 (2023)

[89].Three-terminal Vertical Ferroelectric Synaptic Barristor enabled by HZO/graphene Heterostructure with Rebound Depolarization

S. Jang†, Y. Kim†, J. Jeon, S. Ham, S. Choi, J. Yang, S. K. Kim, S. Jeon., J. Jang*, and G. Wang* J. Alloys Compd. 965, 25, 1712247 (2023)

[88]. Real-time finger motion recognition using skin-conformable electronics

H. Cho†, I. Lee, J. Jang†, J.-H. Kim, H. Lee, S. Park* and G. Wang* Nature Electronics. 6, 619-629 (2023)

[87]. Filament-free memristors for Computing

S. Choi, T. Moon, G. Wang, and J. Yang* Nano Convergence 10, 58 (2023) (*Invited review)

[86]. Recent Progress in Two-Terminal Memristors Utilizing Halide Perovskites and their Potential Applications

Y. Park and G. Wang* J. Flex. and Print. Elect. accepted (2023) (*Invited review)

2022

[85]. Flexible neural network realized by the probabilistic SiOx memristive synaptic array for energy-efficient image learning

S. Choi, J. Jang, M. S. Kim, N.-D. Kim, J. Kwag and G. Wang* Adv. Sci, 2104773 (2022)

[84]. Integration of multiple electronic components on a microfiber toward emerging electronic textile platform

S. Hwang, M. Kang, A. Lee, S. Bae, S.-K. Lee, S. H. Lee, T. Lee, G. Wang and T.-W. Kim* Nature Com, 13 (1), 1-10 (2022)

[83]. A learning-rate modulable and reliable TiOx memristor array for robust, fast, and accurate neuromorphic computing

J. Jang†, S. Gi†, I. Yeo, S. Choi, S. Jang, S. Ham, B. Lee* and G. Wang* Adv. Sci. 2201117 (2022) (†contributed equally to this work)

[82]. Multiple switching modes of NiOx memristor for memory-driven multifunctional device applications

Y. Park, H. Choi, and G. Wang* ACS Appl. Elec. Mater., 4, 7, 3739–3748 (2022)

[81]. Advances of various heterogeneous structure types in molecular junction systems and their charge transport properties

J. Shin, J. E. Eo, T. Jeon, T. Lee* and G. Wang* Adv. Sci. 9, 2202399 (2022) (*review article) (*Back cover selected)

[80]. Molecular van der Waals heterojunction photodiodes enabling dipole-induced polarity switching

J. Shin, S. Yang, J. S. Eo, T. Jeon, J. Lee, C.-H. Lee*, and G. Wang* Small Methods, 6, 2200646 (2022) (*Back cover selected)

[79]. Ultra-Large Dynamic Range Synaptic Indium Gallium Zinc Oxide Transistors

T. Kwak, M-J. Kim, W-J. Lee, E. C. Kim, J. Jang, G. Wang, T.-W. Kim, Y. S. Kim, and S. Park* Appl. Mater. Today. 9, 101648 (2022)

2021

[78]. Run-off election-based decision method for the training and inference process in an artificial neural network

J. Jang*, S. Jang, S. Choi, and G. Wang* Scientific Reports, 11, 895 (2021)

[77]. Energy-efficient three-terminal SiOx memristor crossbar array enabled by vertical Si/graphene heterojunction barristor

S. Choi†, J.-W. Choi†, J. C. Kim, H. Y. Jeong, J. Shin, S. Jang, S. Ham, N.-D. Kim, and G. Wang* Nano Energy, 84, 105947 (2021)

[76]. Transparent and unipolar nonvolatile memory using two-dimensional vertically stacked layered double hydroxide

H. Cho, C.-W. Jeon, B.-D. On, I.-K. Park, S. Choi, J. Jang* and G. Wang* Adv. Mater. Inter., 2001990 (2021) (*Front cover selected)

[75]. Tailoring the interfacial band offset by the molecular dipole orientation for a molecular heterojunction selector

J. S. Eo†, J. Shin†, S. Yang, T. Jeon, J. Lee, S. Choi, C.-H. Lee and G. Wang* Adv. Sci. 2101390 (2021) (*Frontpiece selected)

[74]. Retina-Inspired Structurally Tunable Synaptic Perovskite Nanocones

K. Lee, H. Han, Y. Kim, J. Park, S. Jang, H. Lee, S. W. Lee, H.Y. Kim, Y. Kim, T. Kim, D. Kim, G. Wang, and C. Park* Adv. Funct. Mater. 2105596 (2021) (*Front cover selected)

[73]. Controllable SiOx Nanorod Memristive Neuron for Probabilistic Bayesian Inference

S. Choi, G. S. Kim, J. Yang, H. Cho, C.-Y. Kang and G. Wang* Adv. Mater. 34, 2104598 (2022)

[72]. Bird-Inspired Self-Navigating Artificial Synaptic Compass

Y. Kim, K. Lee, J. Lee, S. Jang, H. Kim, H. Lee, S. W. Lee, G. Wang, and C. Park* ACS Nano 15, 20116 (2021)

2020

[71]. A Hardware and Energy-Efficient Online Learning Neural Network with an RRAM Crossbar Array and Stochastic Neurons

I. Yeo, S-G. Gi, G. Wang and B. Lee* IEEE Trans. Ind. Electron. 68 (11), 11554-11564 (2020)

[70]. Emerging Memristive Artificial Synapses and Neurons for Energy-Efficient Neuromorphic Computing

S. Choi, J. Yang, and G. Wang* Adv. Mater. 20044659 (2020) (*Invited Progress Report)

[69]. Artificially Intelligent Tactile Ferroelectric Skin

K. Lee†, S. Jang†, K. L. Kim, M. Koo, C. Park, S. Lee, J. Lee, G. Wang* and C. Park* Adv. Sci. 7, 2001662 (2020) †Equally contribute (*Inside Cover Feature)

[68]. One-dimensional organic artificial multi-synapses enabling electronic-textile neural network for wearable neuromorphic applications

S. Ham†, M. Kang†, S. Jang†, J. Jang, S. Choi, T.-W. Kim* and G. Wang* Science Adv. 6 : eaba1178 (2020) †Equally contribute

[67]. Tunable rectification in a molecular heterojunction with two-dimensional semiconductors

J. Shin†, S. Yang†, Y. Jang, J. S. Eo, T.-W. Kim, T. Lee, C.-H. Lee*, and G. Wang* Nature Comm. 11:1412, (2020) †Equally contribute

2019

[66]. Two-in-one device with versatile compatible electrical switching or data storage functions controlled by the ferroelectricity of P(VDF-TrFE) via photocrosslinking

S. Hwang, S. Jang, M. Kang, S. Bae, S.-K. Lee, S. H. Lee, G. Wang, S. Fabiano, M. Berggren, and T.-W. Kim* ACS Appl. Mater. Inter. 2, 825358-25368 (2019)

[65]. Ultrathin conformable organic artificial synapse for wearable intelligent device applications

S. Jang†, S. Jang†, E.-H. Lee, G. Wang* and T.-W. Kim* ACS Appl. Mater. Inter. 11(1), 1071-1080 (2019) †Equally contribute

[64]. Photonic Organolead Halide Perovskite Artificial Synapse Capable of Accelerated Learning at Low Power Inspired by Dopamine-facilitated Synaptic Activity

S. Ham, S. Choi, H. Cho, S.-I. Na and G Wang* Adv. Funct. Mater., 29, 1806646 (2019) (*Back Cover Feature)

2018

[63]. A Self-rectifying TaOy/Nanoporous TaOx Memristor Synaptic Array for Learning and Energy-efficient Neuromorphic Systems

S. Choi†, S. Jang†, J.-H. Moon, J. C. Kim, H. Y. Jeong, P. Jang, K.-J. Lee, and G. Wang* NPG Asia Mater., 10, 1097–1106 (2018) †Equally contribute. (*Feature Article)

[62]. Synaptic barristor based on phase-engineered two-dimensional heterostructures

W. Huh†, S. Jang†, J. Y. Lee, D. Lee, D. Lee, J. M. Lee, H.-G. Park, J. C. Kim, H. Y. Jeong, G. Wang* and C.-H. Lee* Adv. Mater., 30, 1801447 (2018) †Equally contribute. (*Back Cover Feature)

[61]. Correlational Effects of the Molecular-Tilt Configuration and the Intermolecular van der Waals Interactions on the Charge Transport in the Molecular Junctions

J. Shin, K. Gu, S. Yang, C.-H. Lee, T. Lee, Y. H. Jang*, and G. Wang* Nano Lett., 18, 7, 4322-4330 (2018)

[60]. 2D Single-crystalline Copper Nanoplates as a Conductive Filler for Electronic Ink Applications

J.-W. Lee, J. Han, D. S. Lee, S. Bae, S. H. Lee, S.-K. Lee, B. J. Moon, C.-J. Choi, G. Wang, and T.-W. Kim* Small, 14, 1403312 (2018)

2017

[59]. Low temperature-grown KNbO3 thin films and their application to piezoelectric nanogenerators and self-powered ReRAM device

T.-H. Lee, H.-G. Hwang, S. Jang, G. Wang, S. Han, D.H. Kim, C.-Y. Kang, and S. Nahm* ACS Appl. Mater. Inter. 9, 43220–43229 (2017)

[58]. Controllable switching filaments prepared via tunable and well-defined single truncated conical nanopore structures for fast and scalable SiOx memory

S. Kwon, S. Jang, J.-W. Choi, S. Choi, S.-J. Jang, T.-W. Kim* and G. Wang* Nano Lett, 17, 7462–7470 (2017)

[57]. Interface-Engineered Charge Transport Properties in Benzenedithol Molecular Electronic Junctions via Chemically p-doped Graphene Electrodes

Y. Jang†, S.-J. Kwon†, J. Shin, H. Jeong, W.-T. Hwang, J.-W. Kim, J. Koo, T. Y. Ko, S. Ryu, G. Wang, T.-W. Lee*, and T. Lee* ACS Appl. Mater. Inter. 9, 42043–42049 (2017)

[56]. An all-organic composite system for resistive change memory via the self-assembly of plastic-crystalline molecules

A.-N. Cha, S.-A. Lee, S. Bae, S. H. Lee, D. S. L, G. Wang, and T-W Kim* ACS Appl. Mater. Inter. 9, 2730−2738 (2017)

[55]. Structurally engineered nanoporous Ta2O5-x selector-less memristor for high uniformity and low power consumption

S. Kwon†, T.-W. Kim†, S. Jang, J.-H. Lee, N. D. Kim, Y. Ji, C.-H. Lee, J. M. Tour*, and G Wang* ACS Appl. Mater. Inter. 9, 34015 (2017) † Equally contributed

2016

[54]. Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes

W.-T. Hwang, M. Min, H. Jeong, D. Kim, J. Jang, D. Yoo, Y. Jang, J.-W. Kim, J. Yoon, G.-C. Yi, H. Lee, G. Wang*, and T. Lee* Nanotechnology, 27, 475201 (2016)

[53]. Growing Carbon Nanotubes from Both Sides of Graphene

J. Jiang, Y. Li, C. Gao, N. D. Kim, X. Fan, G. Wang, Z. Peng, R. H Hauge, and J. M Tour* ACS Appl. Mater. Inter. 8 (11), 7356-7362 (2016)

[52]. Graphene quantum dots as a highly efficient solution-processed charge trapping medium for organic nano-floating gate memory

Y. Ji, J. Kim, A.-N. Cha, S.-A. Lee, M. W. Lee, J. S. Suh, S. Bae, B. J. Moon, S. H. Lee, D. S. Lee, G. Wang, and T.-W. Kim* Nanotechnology, 27, 145204 (2016)

[51]. Integrated all-organic 8× 8 one transistor-one resistor (1T-1R) crossbar resistive switching memory array

Y. Ji, A.-N. Cha, S.-A. Lee, S. Bae, S. H. Lee, D. S. Lee, H. Choi, G. Wang, and T.-W. Kim* Org. Electron. 29, 66-71. (2016)

[50]. Growth and Transfer of Seamless 3D Graphene-Nanotube Hybrids

N.D. Kim, Y. Li, G. Wang, X. Fan, J. Jiang, L. Li, Y. Ji, G. Ruan, R.H. Hauge*, and J.M. Tour* Nano Lett, 16, 1287-1292 (2016)

[49]. One step synthesis of Au nanoparticle-cyclized polyacrylonitrile composite films and their use in organic nano-floating gate memory applications

S.-P. Cho, S. Jang, H.-N. Jo, S.-A. Lee, S. Bae, S. Lee, J.Y. Hwang, H.-I. Joh, G. Wang, and T.-W. Kim* J. Mater. Chem. C, 4 (7), 1511-1516 (2016)

2015

[48]. Molecular-scale charge trap medium for organic non-volatile memory transistors
S-A. Lee, D.Y. Kim, K.-U. Jeong, S. H. Lee, S. Bae, S. D. S. Lee, G. Wang, T.-W. Kim*, Org. Electron. 27, 18-23. (2015)

[47]. Carbon-Free Electrocatalyst for Oxygen Reduction and Oxygen Evolution Reactions

Y. Yang, H. Fei, G. Ruan, L. Li, G. Wang, N.D. Kim, and J. M. Tour*, ACS Appl. Mater. Inter. 7 (37), 20607-20611 (2015)

[46]. Three-Dimensional Networked Nanoporous Ta2O5-x Memory system for Ultrahigh Density Storage

G. Wang , J.-H. Lee , Y. Yang , G. Ruan , N. D. Kim , Y. Ji , and J. Tour*, Nano Lett. 5 (9), 6009-6014 (2015)

[45]. Boron/Nitrogen Co-Doped Helically Unzipped Multiwalled Carbon Nanotubes as Efficient Electrocatalyst for Oxygen Reduction

Y. A. Zehtab, H. Fei, R. Ye, G. Wang, J. M. Tour*, and S. Uttandaraman*, ACS Appl. Mater. Inter. 7 (14), 7786–7794 (2015)

[44]. Tungsten-based porous thin-films for electrocatalytic hydrogen generation

H. Fei, Y. Yang, X. Fan, G. Wang, G. Ruan, and J. M. Tour*, J. Mater. Chem. A 3 (11), 5798-5804 (2015)

[43]. Rebar Graphene with Boron Nitride Nanotubes

Y. Li, Z. Peng, E. Larios, G. Wang, J. Lin, Z. Yan, F. Ruiz-Zepeda, M. Jose-Yacaman, and J. M. Tour*, ACS Nano, 9(1), 532-538 (2015)

2014

[42]. Three-Dimensional Thin-Film for Lithium-Ion Batteries and Supercapacitors
Y. Yang†, Z. Peng†, G. Wang, G. Ruan, X. Fan, L. Li, H. Fei, R. Hauge, and J. M. Tour*, ACS Nano, 8 (7), 7279–7287 (2014)

[41]. Nanoporous Silicon Oxide Memory

G. Wang, Y. Yang, J.-H. Lee, V. Abramova, H. Fei, G. Ruan, E. L. Thomas, and J. M. Tour*, Nano Lett. 14 (8), 4694–4699 (2014)

[40]. High Thermal Conductivity of Suspended Few-Layer Hexagonal Boron Nitride Sheets

H. Zhou, J. Zhu, Z. Liu, Z. Yan, X. Fan, J. Lin, G. Wang, Q. Yan, T. Yu, P. M. Ajayan* and J. M. Tour*, Nano Res. 7, 1232-1240 (2014)

[39]. Flexible 3-Dimensional Nanoporous Metal Compound Energy Devices

Y. Yang, G. Ruan, C. Xiang, G. Wang, and J. M. Tour*, J. Am. Chem. Soc. 136 (17), 6187–6190 (2014)

[38]. Three-dimensional nanoporous Fe2O3/Fe3C-graphene heterogeneous thin films for Lithium-Ion Batteries

Y. Yang†, X. Fan†, G. Casill, Z. Peng, G. Wang, L. Li, H. Fei, J. Lin, M. J.-Yacama, R. H. Hauge* and J. M. Tour*, ACS Nano, 8 (4), 3939–3946 (2014)

[37]. Enhanced Electrocatalysis for Hydrogen Evolution Reactions from WS2 Nanoribbons

J. Lin, Z. Peng, G. Wang, D. Zakhidov, E. Larios, M. J. Yacaman, J. M. Tour*, Adv. Energy Mater. 4, 1301875 (2014)

[36]. Conducting-Interlayer SiOx Memory Devices on Rigid and Flexible Substrates

G. Wang, A.-R. O. Raji, J.-H. Lee, and J. M. Tour*, ACS Nano, 8 (2), 1410–1418 (2014)

[35]. Large Hexagonal Bi- and Trilayer Graphene Single Crystals with Varied Interlayer Rotations

Z. Yan†, Y. Liu†, L. Ju, Z. Peng, J. Lin, G. Wang, H. Zhou, C. Xiang, E. L. G. Samuel, C. Kittrell, V. Artyukhov, F. Wang, B. I. Yakobson, and J. M. Tour*, Angew. Chem. Int. Ed. 126 (6), 1591-1595 (2014)

[34]. Redox-induced Asymmetric Electrical Characteristics of Ferrocene-Alkanethiolate Molecular Devices on Rigid and Flexible Substrate

H. Jeong†, D. Kim†, G. Wang, S. Park, H. Lee, K. Cho, W.-T. Hwang, M.-H. Yoon, Y. H. Jang, H. Song, D. Xiang, and T. Lee*, Adv. Funct. Mater. 24, 2472–2480 (2014) *Back Cover Picture

[33]. Effect of Molecular Desorption on the Electronic Properties of Self-Assembled Polarizable Molecular Monolayers

G. Wang, H. Jeong, J. Ku, S.-I. Na, H. Kang, E. Ito, Y. H. Jang, J. Noh, and T. Lee*, J. Colloid Interf. Sci. 419, 39-45 (2014)

2013

[32]. Hexagonal Graphene Onion Rings
Z. Yan, Y. Liu, J. Lin, Z. Peng, G. Wang, E. Pembroke, H. Zhou, C. Xiang, A.-R. O Raji, E. L. G. Samuel, T. Yu, B. I. Yakobson, and J. M. Tour*, J. Am. Chem. Soc. 135 (29), 10755-10762 (2013)

[31]. High-Performance and Low-Power Rewritable SiOx 1 kbit One Diode-One Resistor (1D-1R) Crossbar Memory Array

G. Wang, A. C. Lauchner, J. Lin, D. Natelson, K. V. Palem, and J. M. Tour*, Adv. Mater. 25 (34), 4789-4793 (2013)

2012

[30]. Flexible Molecular-Scale Electronic Device Composed of Diarylethene Photoswitching Molecules
S. Park†, G. Wang†, B. Cho, Y. Kim, S. Song, Y. Ji, M. Yoon, and T. Lee *, Nature Nanotech. 7, 438-442 (2012) †Equally contribute.

*한국과학기술단체총연합회가 선정한 2012년 올해의 10대 과학기술

[29]. Effect of PEDOT:PSS-Molecule Interface on the Charge Transport Characteristics of The Large-Area Molecular Electronic Junctions

G. Wang, S.-I. Na, T.-W. Kim, Y. Kim, S. Park, T. Lee*, Org. Electron. 13, 771–777 (2012)

2011

[28]. Electrical Transport Characteristics Through Molecular Layers
G. Wang, T.-W. Kim, T. Lee*, J. Mater. Chem. 21, 18117–18136 (2011) *Invited Review Article. *Front Cover Picture

[27]. Electronic Properties Associated with Conformational Changes in Azobenzene-Derivative Molecular Junctions

Y, Kim, G. Wang, M. Choe, J. Kim, S. Lee, S. Park, D.-Y. Kim, and T. Lee*, Org. Electron. 12, 2144-2150 (2011)

[26]. Investigation of the Transition Voltage Spectra of Molecular Junctions Considering Both Frontier Molecular Orbitals and Asymmetric Coupling Effect
G. Wang, Y. Kim, S.-I. Na, Y. H. Kahng, J. Ku, S. Park, Y. H. Jang, D.-Y. Kim, and T. Lee*, J. Phys. Chem. C, 115, 17979–17985 (2011)

[25]. Enhanced Charge Injection in Pentacene Field Effect Transistors with Graphene Electrodes

S. Lee, G. Jo, S.-J. Kang, G. Wang, M. Choe, W. Park, D.-Y. Kim, Y. H. Kahng, and T. Lee*, Adv. Mater. 23, 100-105 (2011)

[24]. New Approach for Molecular Electronic Junctions with Multi-Layer Graphene Electrode

G. Wang, Y. Kim, M. Choe, T.-W. Kim, T. Lee*, Adv. Mater. 23, 755-760 (2011) *Front Cover Picture

2010

[23]. Effect of Metal Ions on Switching Performances of Polyfluorene-based Organic Non-volatile Memory Devices
T.-W. Kim, S.-H. Oh, H. Choi, J. Lee, G. Wang, J. Park, D.-Y. Kim, H. Hwang and T. Lee*, Org. Electron. 11, 109-114 (2010)

[22]. Three-Dimensional Integration of Organic Resistive Memory Devices

S. Song, B. Cho, T.-W. Kim, Y. Ji, M. Jo, G. Wang, M. Choe, Y. H. Kahng, H. Hwang, and T. Lee*, Adv. Mater. 22, 5048-5052 (2010) *Front Cover Picture

[21]. Tuning of a Graphene-Electrode Work Function to Enhance the Efficiency of Organic Bulk Heterojunction Photovoltaic Cells with an Inverted Structure

G. Jo, S.-I. Na, S.-H. Oh, S. Lee, T.-S. Kim, G. Wang, M. Choe, W. Park, J. Yoon, D.-Y. Kim, Y. Ho Kahng, and T. Lee*, Appl. Phys. Lett. 213301 (2010) *Selected as one of APL's monthly top 20 most-downloaded articles in 2010 November

[20]. Tuning of the Electronic Characteristics of ZnO Nanowire Field Effect Transistors by Proton Irradiation

W.-K. Hong, G. Jo, J. I. Sohn, W. Park, M. Choe, G. Wang, Y. H. Kahng, M. E. Welland, and T. Lee*, ACS Nano. 4, 811–818 (2010)

[19]. Electrical Properties of ZnO Nanowire Field Effect Transistors with Varying High-k Al2O3 Dielectric Thickness

M. Choe, G. Jo, J. Maeng, W.-K. Hong, M. Jo, G. Wang, W. Park, B. Lee, H. Hwang, and T. Lee*, J. Appl. Phys. 107, 034504 (2010) *This article was selected in Virtual Journal of Nanoscale Science & Technology, Vol. 21, Issue 8 (02. 22, 2010)

[18]. Effect of Ag Nanoparticles on Resistive Switching of Polyfluorene based Organic Non-Volatile Memory Devices

T.-W. Kim, S.-H. Oh, H. Choi, G. Wang, D.-Y. Kim, H. Hwang and T. Lee*, J. Kor. Phys. Soc. 56, 128 (2010)

2009

[17]. Enhancement of Field Emission Transport by Molecular Tilt Configuration in Metal-Molecule-Metal Junction
G. Wang, T.-W. Kim, G. Jo, and T. Lee*, J. Am. Chem. Soc. 131, 5980-5985 (2009) *Introduced at NanoWeekly, No. 311

[16]. Statistical Analysis of Metal-Molecule Contacts in Alkyl Molecular Junctions: Sulfur vs Selenium End-Group

H. Yoo, J. Choi, G. Wang, T.-W. Kim, J. Noh, and T. Lee*, J. Nanosci. Nanotech. 9, 7012-7015 (2009)

[15]. Unipolar Nonvolatile Memory Devices with Composites of Poly(9-vinylcarbazole) and Titanium Dioxide Nanoparticles

B. Cho, T.-W. Kim, M. Choe, G. Wang, S. Song, and T. Lee*, Org. Electron. 10, 473 (2009)

[14]. Electrical Conduction through Self-Assembled Monolayers in Molecular Junctions: Au/molecules/Au versus Au/molecule/PEDOT:PSS/Au

G. Wang, H. Yoo, S.-I. Na, T.-W. Kim, B. Cho, D.-Y. Kim, and T. Lee*, Thin Solid Films, 518, 824 (2009)

[13]. One Transistor–One Resistor Devices for Polymer Non-Volatile Memory Applications

T.-W. Kim, H. Choi, S.-H. Oh, G. Wang, D.-Y. Kim, H. Hwang, and T. Lee*, Adv. Mater. 21, 2497 - 2500 (2009) *Inside Cover Picture

[12]. Resistive Switching Characteristics of Polymer Non-volatile Memory Devices in a Scalable Via-hole Structure

T.-W. Kim, H. Choi, S.-W. Oh, M. Jo, G. Wang, B. Cho, D.-Y. Kim, H. Hwang and T. Lee*, Nanotechnology, 20, 025201 (2009)

*Downloaded more than 200 times by February 9, 2009.

*Selected as one of Nanotechnology highlights 2009 (one of six chosen papers in Electronics and Photonics field)

[11]. Evolution of nanomorphology and anisotropic conductivity in solvent-modified PEDOT:PSS films for polymeric anodes of polymer solar cells

Seok.-In. Na, G. Wang, S.-S. Kim, T.-W. Kim, S.-H. Oh, B.-K. Yu, T. Lee and D.-Y. Kim*, J. Mater. Chem. 19, 9045-9053 (2009)

[10]. Tuning of operation mode of ZnO nanowire field effect transistors by solvent-driven surface treatment

W. Park, W.-K. Hong, G. Jo, G. Wang, M. Choe, J. Maeng, Y. Ho Kahng and T. Lee*, Nanotechnology, 20, 475702 (2009)

2008

[09]. A direct Metal Transfer method for Cross-bar type Polymer Non-volatile Memory Applications
T.-W. Kim, K. Lee, S.-H. Oh, G. Wang, D.-Y. Kim, G.-Y. Jung, and T. Lee*, Nanotechnology, 19, 405201 (2008)

[08]. Effects of Metal-Molecule Contact and Molecular Structure on Molecular Electronic Conduction in Nonresonant Tunneling Regime: Alkyl versus Conjugated Molecules

G. Wang, T.-W. Kim, Y. H. Jang, and T. Lee*, J. Phys. Chem. C, 112, 13010 (2008)

[07]. Reversible Switching Characteristics of Polyfluorene-Derivative Single Layer Film for Non-Volatile Memory Devices
T.-W. Kim, S.-H. Oh, H. Choi, G. Wang, D.-Y. Kim, H. Hwang, and T. Lee*, Appl. Phys. Lett. 92, 253308 (2008)

[06]. Structural and Electrical Characterization of Intrinsic N-type In2O3 Nanowire

G. Jo, W.-K. Hong, J. Maeng, T.-W. Kim, G. Wang, A. Yoon, S.-S. Kwon, S. Song, and T. Lee*, Colloids Surf., A, 313-314, 308-311 (2008)

[05]. Reliable Organic Non-Volatile Memory Device using Polyfluorene-derivative Single Layer Film
T.-W. Kim, S.-H. Oh, H. Choi, G. Wang, H. Hwang, D.-Y. Kim and T. Lee*, IEEE Elect. Dev. Lett. 29, 852 (2008)

[04]. Statistical Analysis of Electronic Transport through Chemisorbed versus Physisorbed Alkanethiol Self-Assembled Monolayers

T.-W. Kim, G. Wang, and T. Lee*, IEEE Trans. Nanotech. 7, 140-144 (2008)

2007

[03]. Influence of Metal-MoleculeContacts on Decay Coefficients and Specific Contact Resistances in Molecular Junctions
G. Wang, T.-W. Kim, H. Lee, and T. Lee*, Phys. Rev. B, 76, 205320 (2007)

*This article was selected in Virtual Journal of Nanoscale Science & Technology, Vol. 16, Issue 23 (Dec. 3, 2007)

[02]. Statistical Analysis of Electronic Properties of Alkanethiols in Metal-Molecule-Metal Junctions

T.-W. Kim, G. Wang, H. Lee, and T. Lee*, Nanotechnology, 18, 315204 (2007)

2006

[01]. Charge Transport of Alkanethiol Self-Assembled Monolayers in Micro-Via Hole Devices
T.-W. Kim, G. Wang, H. Song, N.-J. Choi, H. Lee, and T. Lee*, J. Nanosci. Nanotechnol. 6, 3487–3490 (2006)

Wang Lab. (Next Group)

(Neuromorphic Electronic device and eXtended computing Technology Group)

ADDRESS

Department of Integrative Energy Engineering,

Korea University, R&D Center, Room 412c

145 Anam-ro, Seongbuk-gu, Seoul (02841)

EMAIL gunukwang@korea.ac.kr

Copyright © Wang Research Group. All rights reserved

Wang Lab. (Next Group)

(Neuromorphic Electronic device and eXtended computing Technology Group)

ADDRESS

Department of Integrative Energy Engineering,

Korea University, R&D Center, Room 412c

145 Anam-ro, Seongbuk-gu, Seoul (02841)

EMAIL gunukwang@korea.ac.kr

Copyright © Wang Research Group. All rights reserved